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dc.creatorGranitzer, Petra
dc.creatorRumpf, Klemens
dc.creatorStrzhemechny, Yuri M.
dc.creatorChapagain, Puskar
dc.date.accessioned2016-09-14T18:45:17Z
dc.date.available2016-09-14T18:45:17Z
dc.date.issued2014-08-21
dc.identifier.urihttps://doi.org/10.1186/1556-276X-9-423
dc.identifier.urihttps://repository.tcu.edu/handle/116099117/11460
dc.identifier.urihttps://nanoscalereslett.springeropen.com/articles/10.1186/1556-276X-9-423
dc.description.abstractMesoporous silicon and porous silicon/Ni nanocomposites have been investigated in this work employing light-dark surface photovoltage (SPV) transients to monitor the response of surface charge dynamics to illumination changes. The samples were prepared by anodization of a highly n-doped silicon wafer and a subsequent electrodepositing of Ni into the pores. The resulting pores were oriented towards the surface with an average pore diameter of 60 nm and the thickness of the porous layer of approximately 40 µm. SPV was performed on a bare porous silicon as well as on a Ni-filled porous silicon in vacuum and in different gaseous environments (O2, N2, Ar). A significant difference was observed between the 'light-on' and 'light-off' SPV transients obtained in vacuum and those observed in gaseous ambiences. Such behavior could be explained by the contribution to the charge exchange in gas environments from chemisorbed and physisorbed species at the semiconductor surface.
dc.language.isoenen_US
dc.publisherSpringerNature
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceNanoscale Research Letters
dc.subjectPorous silicon
dc.subjectElectrodeposition
dc.subjectSurface photovoltage
dc.titleTransient surface photovoltage studies of bare and Ni-filled porous silicon performed in different ambients
dc.typeArticle
dc.rights.holderGranitzer et al.
dc.rights.licenseCC BY 4.0
local.collegeCollege of Science and Engineering
local.departmentPhysics and Astronomy
local.personsStrzhemechny, Chapagain (PHYS)


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