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dc.creatorTian, Yuan
dc.creatorFlewitt, Andrew J.
dc.creatorCanham, Leigh T.
dc.creatorCoffer, Jeffery L.
dc.date.accessioned2018-09-11T15:41:46Z
dc.date.available2018-09-11T15:41:46Z
dc.date.issued2018
dc.identifier.urihttps://repository.tcu.edu/handle/116099117/22103
dc.identifier.urihttps://doi.org/10.18776/DS/22103
dc.descriptionDataset for article: Tian, Y., Flewitt, A. J., Canham, L. T. et al. (2018). In vitro dissolution behavior of hydrogenated amorphous silicon thin-film transistors. npj Materials Degradation, 2, Article 41. https://doi.org/10.1038/s41529-018-0063-0
dc.description.abstractRecent developments in biodegradable nanostructured crystalline silicon and flexible silicon-based electronic devices raise the significant question of the stability of standard amorphous silicon transistor platforms in biologically relevant environments. In this work, we evaluate the biodegradation of hydrogenated amorphous silicon thin film transistors. Specifically, using a combination of gravimetric analysis, optical imaging, and X-ray fluorescence, we investigate the fundamental stability of a simple hydrogenated amorphous silicon thin film transistor structure immersed in phosphate-buffered saline at physiological temperature (37 degrees C). In addition to the possible galvanic influence of associated metal electrodes in the degradation of such devices, implications for future device platforms are also discussed.en_US
dc.titleDataset: In vitro dissolution behavior of hydrogenated amorphous silicon thin-film transistorsen_US
dc.typeDataseten_US
local.collegeCollege of Science and Engineering
local.departmentChemistry and Biochemistry


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