In vitro dissolution behavior of hydrogenated amorphous silicon thin-film transistors

Abstract

Recent developments in biodegradable nanostructured crystalline silicon and flexible silicon-based electronic devices raise the significant question of the stability of standard amorphous silicon transistor platforms in biologically relevant environments. In this work, we evaluate the biodegradation of hydrogenated amorphous silicon thin film transistors. Specifically, using a combination of gravimetric analysis, optical imaging, and X-ray fluorescence, we investigate the fundamental stability of a simple hydrogenated amorphous silicon thin film transistor structure immersed in phosphate-buffered saline at physiological temperature (37 degrees C). In addition to the possible galvanic influence of associated metal electrodes in the degradation of such devices, implications for future device platforms are also discussed.